Johnny Chung Yin HO, 何頌賢

Research Interests/Areas - Monolayer Assisted Nano-Scale Processing Device scaling has been the driving force for technology advancements in the semiconductor industry over the last few decades. This scaling presents a tremendous challenge to fabricate nano-scale devices controllably and cost-effectively. In this regard, we aim to explore the manipulation of the surface properties of semiconductor nanostructures to enable alternative and novel nano-scale device fabrication schemes. - Synthesis and Characterization of Fundamental Properties of Nano-Materials Recently, nano-materials have attracted a large amount of research attention due to the unique physical properties of materials at the nano-scale. We are interested in developing new synthesis techniques to enable new functionalities of nano-materials. At the same time, it is essential to study and understand the fundamental properties of the materials in order to tailor them for technological applications. - Large-Scale and Heterogeneous Integration of Nano-Materials for Flexible and High Performance Technological Applications Although numerous amazing properties of nano-materials such as nanowires (NW) have been reported, the controlled and uniform assembly of “bottom-up” NW materials with high scalability is still one of the significant bottleneck challenges to integrate NWs for practical technological applications. In this regard, we have achieved a high throughput and generic printing approach to assemble NWs on any substrate including Si, plastics, paper, and glass. With this approach, nano-materials based electronic, energy-harvesting, photonic and sensor applications will be explored.

[2026] Achieving Infinite Polarization Ratio in Photodetectors Using In-Plane Anisotropic 2D Materials and Back-to-Back Schottky Structures Wen, S., Lan, C., Zhang, R., Zhou, S., Li, C., Yin, Y., Ho, J. C. & Liu, Y., 4 Jan 2026, (Online published) In: Laser and Photonics Reviews. e02842. RGC 21 - Publication in refereed journal [2026] Activating Phase-Transition Toughening in van der Waals Semiconductor GaTe Xu, R. (Co-first Author), Gao, B. (Co-first Author), Zhao, D. (Co-first Author), Zhou, J., Zhu, Q., Ma, Y., Li, B., Zhang, Y., Chen, J., Zhang, Q., Meng, F., Ho, J. C., Yu, M. & Lu, Y., Jul 2026, In: Nano Letters. 26, 29, p. 9514-9522. RGC 21 - Publication in refereed journal [2026] Ag2Se 基二維聲子晶體及其製備方法 HO, J. C. Y. (Inventor), ZHANG, S. (Inventor), LI, D. (Inventor) & LI, B. (Inventor)